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磷化銦InP單晶襯底片，高質量大直徑低位錯磷化銦單晶是第二代半導體材料。包含2寸，3寸，4寸，6寸等不同規格產品。 InP single crystal substrate sheet, high quality large diameter low misp indium single crystal is the second generation semiconductor material.Including 2 inches, 3 inches, 4 inches, 6 inches and other products of different specifications.

磷化銦InP外延片，高質量大直徑低位錯磷化銦單晶是第二代半導體材料。包含2寸，3寸，4寸,6寸等不同規格產品。 InP epitaxial wafer, high quality large diameter low misp indium single crystal is the second generation semiconductor material.Including 2 inches, 3 inches, 4 inches,6 inches and other products of different specifications.